BUK7606-55B,118 datasheet

Маркировка

BUK7606-55B,118
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BUK7606-55B,118 Configuration: Single Continuous Drain Current: 154 A Current - Continuous Drain (id) @ 25?° C: 75A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 64nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950618 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: D??Pak, TO-263 (2 leads + tab) Power - Max: 254W Power Dissipation: 300000 mW Rds On (max) @ Id, Vgs: 6 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0063 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.0063 Ohms Fall Time: 110 ns Rise Time: 115 ns Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 155 ns Part # Aliases: /T3 BUK7606-55B Other Names: 934057692118::BUK7606-55B /T3::BUK7606-55B /T3
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